DISTRIBUTION EN ENERGIE DES ELECTRONS EMIS PAR DES STRUCTURES EN COUCHES MINCES METAL-ISOLANT-METAL (AL/SIO-B₂O₃/AU)ROPARS F; DELAUNAY G; DESPUJOLS J et al.1980; THIN SOLID FILMS; ISSN 0040-6090; CHE; DA. 1980; VOL. 65; NO 1; PP. 45-52; ABS. ENG; BIBL. 19 REF.Article

ETUDE DU REGIME THERMIQUE DE FONCTIONNEMENT DU CANAL FORME D'UNE CATHODE METAL-DIELECTRIQUE-METALBURACHEVSKIJ YU A.1981; Z. TEH. FIZ.; ISSN 0044-4642; SUN; DA. 1981; VOL. 51; NO 6; PP. 1311-1313; BIBL. 7 REF.Article

COMMENT ON THEORY AND ANALYSES OF THE AC CHARACTERISTICS OF DEFECT THIN-FILM INSULATORS".FRANCESCHETTI DR; MACDONALD JR.1976; J. APPL. PHYS.; U.S.A.; DA. 1976; VOL. 47; NO 9; PP. 4222; BIBL. 10 REF.Article

ON THE THEORY AND ANALYSES OF THE AC CHARACTERISTICS OF DEFECT THIN FILMS.NADKARNI GS; SIMMONS JG.1976; J. APPL. PHYS.; U.S.A.; DA. 1976; VOL. 47; NO 9; PP. 4223; BIBL. 3 REF.Article

SOME REMARKS TO ELECTRON EMISSION INTO VACUUM FROM LOCAL EMISSION SOURCES OF AL-LIF-AU STRUCTURE.BIEDERMAN H.1976; CZECHOSL. J. PHYS.; CZECHOSL.; DA. 1976; VOL. 26; NO 7; PP. 827-830; H.T. 3; BIBL. 16 REF.Article

Experiment and theory for switching in Al/V₂O₅/Al devicesNADKARNI, G. S; SHIRODKAR, V. S.Thin solid films. 1983, Vol 105, Num 2, pp 115-129, issn 0040-6090Article

Etude des processus dans les canaux formés isolés du système métal-diélectrique-métalVOROB'EV, G. A; LUBSANOV, R. B; TROYAN, P. E et al.Radiotehnika i èlektronika. 1985, Vol 30, Num 7, pp 1380-1383, issn 0033-8494Article

STABLE ROOM-TEMPERATURE LIGHT EMISSION FROM METAL-INSULATOR-METAL JUNCTIONS.JAIN RK; WAGNER S; OLSON DH et al.1978; APPL. PHYS. LETTERS; U.S.A.; DA. 1978; VOL. 32; NO 1; PP. 62-64; BIBL. 17 REF.Article

MECANISME D'EMISSION ELECTRONIQUE DANS LES STRUCTURES MIM ET PROPAGATION DES ELECTRONS DANS LES METAUX.NIQUET G; FLAMION PJ; VERNIER P et al.1977; THIN SOLID FILMS; NETHERL.; DA. 1977; VOL. 44; NO 1; PP. 103-108; ABS. ANGL.; BIBL. 31 REF.Article

SCHOTTKY BARRIER EFFECTS ON THE ELECTRICAL PROPERTIES OF THE BI-NBO₂-BI SYSTEMLALEVIC B; GVISHI M; SHOGA M et al.1979; PHYS. STATUS SOLIDI (A), APPL. RES.; ISSN 0031-8965; DDR; DA. 1979; VOL. 56; NO 1; PP. 379-386; ABS. GER; BIBL. 14 REF.Article

Differential negative resistance in metal/insulator/metal structures with an upper bilayer electrodeBERNEDE, J. C; ABACHI, T.Thin solid films. 1985, Vol 131, Num 3-4, pp L61-L64, issn 0040-6090Article

Analytical examination of the functional form of the experimental conduction characteristic for a formed MIM device showing VCNRRAY, A. K; HOGARTH, C. A; PANK, R. S et al.International journal of electronics. 1985, Vol 58, Num 5, pp 729-742, issn 0020-7217Article

Inelastic tunneling through optical barriersRAJASEKARAN, M; SANKAR, S; BAYNES, P. C et al.Physical review. B, Condensed matter. 1983, Vol 28, Num 8, pp 4810-4812, issn 0163-1829Article

Propagation of a pulse of coherent current near the barrier in the metal-insulator-metal junctionNAGAE, M.Physical review. B, Condensed matter. 1982, Vol 26, Num 10, pp 5484-5505, issn 0163-1829Article

LIGHT EMISSION FROM ELECTRON INJECTOR STRUCTURESTHEIS TN; KIRTLEY JR; DI MARIA DJ et al.1983; PHYSICAL REVIEW LETTERS; ISSN 0031-9007; USA; DA. 1983; VOL. 50; NO 10; PP. 750-754; BIBL. 26 REF.Article

DISPOSITIF DE MESURE POUR L'ETUDE DES COURANTS D'EMISSION DANS LES STRUCTURES METAL-DIELECTRIQUE-METALDYUZHEV NA; KOZLOV AI; MAKHOV VI et al.1982; PRIB. TEH. EKSP.; ISSN 0032-8162; SUN; DA. 1982; NO 3; PP. 204-205; BIBL. 3 REF.Article

ENREGISTREURS THERMOMAGNETIQUES A TRANSFORMATEUR OPTOELECTRONIQUE A BASE D'UNE STRUCTURE METAL-SEMICONDUCTEUR-METALKULI ZADE TS; MELKIN VB; NOZDRIN VV et al.1978; ZH. NAUCH. PRIKL. FOTOGR. KINEMATOGR.; SUN; DA. 1978; VOL. 23; NO 5; PP. 380-381; BIBL. 2 REF.Article

EFFET TUNNEL DES ELECTRONS DANS DES STRUCTURES MIMPILAT M; WYSOKINSKI KI; TARANKO R et al.1974; ANN. UNIV. MARIAE CURIE-SKLODOWSKA, AA; POLOGNE; DA. 1974-1975; VOL. 29-30; PP. 367-372; ABS. RUSSE ANGL.; BIBL. 4 REF.Article

Some peculiarities in the spectral characteristics of metal/insulator/metal structures at constant biasesABDULLAYEV, A. G; KARNAUKHOV, A. M; ABDULLAYEV, K. I et al.Thin solid films. 1983, Vol 106, Num 3, pp L89-L90, issn 0040-6090Article

A mathematical analysis for the peak of the conduction characteristic of formed MIM devicesRAY, A. K; HOGARTH, C. A.Journal of materials science letters. 1985, Vol 4, Num 5, pp 513-516, issn 0261-8028Article

Effet tunnel des électrons à travers des couches dont la surface présente des irrégularités aléatoiresKRYLOV, M. V; SURIS, R. A.ZETF. Pis′ma v redakciû. 1985, Vol 88, Num 6, pp 2204-2211, issn 0044-4510Article

Correlation between current and induced emission processes in MIM diodesPAGNIA, H; SCHNELLBÄCHER, J; SOTNIK, N et al.Physica status solidi. A. Applied research. 1985, Vol 88, Num 2, pp K209-K212, issn 0031-8965Article

The effect of series resistance on the current/voltage characteristics of metal-cermet-metal sandwich structuresBEYNON, J; LI, J.International journal of electronics. 1985, Vol 59, Num 6, pp 723-733, issn 0020-7217Article

Universalité de la relation mutuelle entre les composantes du tenseur de résistance et l'effet Hall quantique à nombre entierPUDALOV, V. M; SEMENCHINSKIJ, S. G; KOPCHIKOV, A. N et al.ZETF. Pis′ma v redakciû. 1985, Vol 89, Num 3, pp 1094-1097, issn 0044-4510Article

Electroformed states in an Au-NaF-Au thin film structureBABULANAM, S. M; IBRAHIM, M.Vacuum. 1983, Vol 33, Num 5, pp 307-309, issn 0042-207XArticle